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参数资料
| 型号： | IRF634NLPbF |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件页数： | 1/11页 |
| 文件大小： | 233K |
| 代理商： | IRF634NLPBF |
Parameter
Max.
8.0
5.6
32
88
3.8
0.59
± 20
110
4.8
8.8
7.3
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to +175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
HEXFET
Power MOSFET
05/28/04
Absolute Maximum Ratings
Description
Fifth Generation HEXFET
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
V
DSS
= 250V
R
DS(on)
= 0.435
I
D
= 8.0A
S
D
G
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
Lead-Free
D
2
Pak
IRF634NS
TO-220AB
IRF634N
TO-262
IRF634NL
IRF634NPbF
IRF634NSPbF
IRF634NLPbF
The TO-220 package is universally preferred for all commercial-
industrial applications at power dissipation levels to
approximately 50 watts. The low thermal resistance and low
package cost of the TO-220 contribute to its wide acceptance
throughout the industry.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D
2
Pak is suitable for high
current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF634NL) is available for low-
profile application.
www.irf.com
1
PD - 95342
相关PDF资料 |
PDF描述 |
|---|---|
| IRF634NPBF | HEXFET Power MOSFET |
| IRF634NSPbF | HEXFET Power MOSFET |
| IRF644S | Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A) |
| IRF6601 | DirectFET⑩ Power MOSFET(Vdss=20V) |
| IRF6602 | HEXFET Power MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF634NPBF | 功能描述:MOSFET N-Chan 250V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF634NS | 功能描述:MOSFET N-Chan 250V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF634NSPBF | 功能描述:MOSFET N-Chan 250V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF634NSTRL | 制造商:IRF 制造商全称:International Rectifier 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 8A I(D) | TO-263AB |
| IRF634NSTRLPBF | 功能描述:MOSFET N-Chan 250V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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