参数资料
型号: IRF7403
厂商: International Rectifier
英文描述: Power MOSFET
中文描述: 功率MOSFET
文件页数: 4/9页
文件大小: 116K
代理商: IRF7403
IRF7403
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
0
400
800
1200
1600
2000
2400
1
10
100
C
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
C
iss
C
o ss
C
rss
0
4
8
12
16
20
0
10
20
30
40
50
60
Q , Total Gate Charge (nC)
V
G
A
FOR TEST CIRCUIT
SEE FIGURE 12
I = 4.0A
V = 24V
0.1
1
10
100
0.0
0.5
V , Source-to-Drain Voltage (V)
1.0
1.5
2.0
2.5
3.0
T = 25°C
T = 150°C
V = 0V
I
S
A
1
10
100
0.1
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
V , Drain-to-Source Voltage (V)
D
I
100us
1ms
10ms
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