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参数资料
| 型号： | IRF7469PBF |
| 厂商： | International Rectifier |
| 英文描述： | SMPS MOSFET |
| 中文描述： | MOSFET的开关电源 |
| 文件页数： | 2/8页 |
| 文件大小： | 135K |
| 代理商： | IRF7469PBF |
IRF7469PbF
2
www.irf.com
Symbol
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Min. Typ. Max. Units
17
–––
–––
15 23 I
D
= 7.2A
–––
7.0
11
–––
5.0
8.0
–––
16
24
–––
11
–––
–––
2.2
–––
–––
14
–––
–––
3.5
–––
–––
2000
–––
–––
480
–––
–––
28
–––
Conditions
V
DS
= 20V, I
D
= 7.2A
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
S
nC
V
DS
= 20V
V
GS
= 4.5V
V
GS
= 0V, V
DS
= 16V
V
DD
= 20V
I
D
= 7.2A
R
G
= 1.8
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 20V
= 1.0MHz
pF
Symbol
I
S
Parameter
Min. Typ. Max. Units
Conditions
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 7.2A, V
GS
= 0V
T
J
= 125°C, I
S
= 7.2A, V
GS
= 0V
T
J
= 25°C, I
F
= 7.2A, V
R
=15V
di/dt = 100A/μs
T
J
= 125°C, I
F
= 7.2A, V
R
=20V
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
–––
–––
–––
–––
–––
–––
0.80
0.65
47
91
77
150
1.3
–––
71
140
120
230
V
t
rr
Q
rr
t
rr
Q
rr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
ns
nC
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Symbol
E
AS
I
AR
Parameter
Typ.
–––
–––
Max.
210
7.2
Units
mJ
A
Single Pulse Avalanche Energy
Avalanche Current
Avalanche Characteristics
S
D
G
Diode Characteristics
2.3
73
V
SD
Diode Forward Voltage
Parameter
Min. Typ. Max. Units
40
–––
Conditions
V
GS
= 0V, I
D
= 250μA
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
––– 0.04 ––– V/°C Reference to 25°C, I
D
= 1mA
–––
–––
V
GS(th)
Gate Threshold Voltage
1.0
–––
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Drain-to-Source Breakdown Voltage
–––
V
12
15.5
–––
–––
–––
–––
–––
17
21
3.0
20
100
200
-200
V
GS
= 10V, I
D
= 9.0A
V
GS
= 4.5V, I
D
= 7.2A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 32V, V
GS
= 0V
V
DS
= 32V, V
GS
= 0V, T
J
= 125°C
V
GS
= 16V
V
GS
= -16V
V
μA
nA
Static @ T
J
= 25°C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
m
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