参数资料
型号: IRF7490
厂商: International Rectifier
英文描述: LED RED HLMP-6000-012 SMT
中文描述: HEXFET功率MOSFET
文件页数: 1/9页
文件大小: 141K
代理商: IRF7490
Symbol
V
DS
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Maximum Power Dissipation
P
D
@T
A
= 70°C
Maximum Power Dissipation
Linear Derating Factor 20 mW/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Parameter
Max.
100
Units
V
Drain-Source Voltage
± 20
5.4
4.3
43
2.5
1.6
A
W
-55 to + 150
°C
300 (1.6mm from case )
www.irf.com
1
Symbol
R
θ
JL
R
θ
JA
Parameter
Typ.
–––
–––
Max.
20
50
Units
Junction-to-Drain Lead
Junction-to-Ambient
°C/W
Thermal Resistance
SO-8
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
IRF7490
HEXFET Power MOSFET
Notes
through are on page 9
Absolute Maximum Ratings
V
DSS
100V
R
DS(on)
max
39m @V
GS
=10V
Q
g
37nC
High frequency DC-DC converters
Benefits
Low Gate-to-Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
Applications
相关PDF资料
PDF描述
IRF7491 HEXFET Power MOSFET
IRF7492PBF HEXFET Power MOSFET
IRF7492 HEXFET Power MOSFET
IRF7493 HEXFET Power MOSFET
IRF7494 HEXFET Power MOSFET
相关代理商/技术参数
参数描述
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IRF7491 制造商:International Rectifier 功能描述:MOSFET N SO-8