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参数资料
| 型号： | IRFE130 |
| 厂商： | SEMELAB LTD |
| 元件分类： | JFETs |
| 英文描述： | N-CHANNEL POWER MOSFET |
| 中文描述： | 7.4 A, 100 V, 0.207 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 2/2页 |
| 文件大小： | 17K |
| 代理商： | IRFE130 |
IRFE130
10/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Parameter
STATIC ELECTRICAL RATINGS
Test Conditions
Min.
Typ.
Max.
Unit
100
0.10
0.18
0.207
4
2
3
25
250
100
–100
650
240
44
12.8
1.0
3.8
28.5
6.3
16.6
30
75
40
45
7.4
30
1.5
300
3.0
Negligible
1.8
4.3
5.8
19
V
GS
= 0
Reference to 25°C
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
≥
15V
V
GS
= 0
I
D
= 1mA
I
D
= 4.7A
I
D
= 7.4A
I
D
= 250mA
I
DS
= 4.7A
V
DS
= 0.8BV
DSS
T
J
= 125°C
V
GS
= 20V
V
GS
= –20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
I
D
= 7.4A
V
DS
= 0.5BV
DSS
V
DD
= 50V
I
D
= 7.4A
R
G
= 7.5
I
S
= 7.4A
V
GS
= 0
I
F
= 7.4A
d
i
/ d
t
≤
100A/
μ
s V
DD
≤
50V
T
J
= 25°C
T
J
= 25°C
ELECTRICAL CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
1
Gate Threshold Voltage
Forward Transconductance
1
Zero Gate Voltage Drain Current
Forward Gate
– Source Leakage
Reverse Gate
– Source Leakage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Pulse Source Current
2
Diode Forward Voltage
1
Reverse Recovery Time
Reverse Recovery Charge
1
Forward Turn–On Time
PACKAGE CHARACTERISTICS
V
V/°C
V
S (
é
)
μ
A
nA
pF
nC
ns
A
V
ns
μ
C
nH
°C/W
BV
DSS
BV
DSS
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
R
θ
JC
R
θ
JPC
Notes
1) Pulse Test: Pulse Width
≤
300ms,
δ ≤
2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Internal Drain Inductance
(measured from 6mm down drain lead to centre of die)
Internal Source Inductance
(from 6mm down source lead to source bond pad)
THERMAL CHARACTERISTICS
Thermal Resistance Junction – Case
Thermal Resistance Junction – PC Board
相关PDF资料 |
PDF描述 |
|---|---|
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| IRFE230 | N-CHANNEL POWER MOSFET |
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相关代理商/技术参数 |
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| IRFE210 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 200V 2.25A 18PIN LCC - Bulk |
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| IRFE230 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 5.5A 18-Pin LLCC 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 200V 5.5A 18PIN LCC - Bulk |
| IRFE310 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 400V 1.25A 18PIN LCC - Bulk |
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