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| 型号： | IRFE230 |
| 英文描述： | N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)) |
| 中文描述： | N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）：4.8A时，RDS（上）：0.46Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本：200伏，身份证（续）：4.8A时，RDS（对）：0.46Ω）） |
| 文件页数： | 2/2页 |
| 文件大小： | 17K |
| 代理商： | IRFE230 |
IRFE230
10/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Parameter
STATIC ELECTRICAL RATINGS
Test Conditions
Min.
Typ.
Max.
Unit
200
0.25
0.40
0.46
4
2
2.5
25
250
100
–100
600
250
80
7.4
2.5
6.0
42.1
5.3
28.1
30
50
50
40
4.8
19
1.4
6.0
3.0
Negligible
1.8
4.3
5.8
19
V
GS
= 0
Reference to 25°C
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
≥
15V
V
GS
= 0
I
D
= 1mA
I
D
= 3.1A
I
D
= 4.8A
I
D
= 250mA
I
DS
= 3.1A
V
DS
= 0.8BV
DSS
T
J
= 125°C
V
GS
= 20V
V
GS
= –20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
I
D
= 4.8A
V
DS
= 0.5BV
DSS
V
DD
= 100V
I
D
=4.8A
R
G
= 7.5
I
S
= 4.8A
V
GS
= 0
I
F
= 4.8A
d
i
/ d
t
≤
100A/
μ
s V
DD
≤
50V
T
J
= 25°C
T
J
= 25°C
ELECTRICAL CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
1
Gate Threshold Voltage
Forward Transconductance
1
Zero Gate Voltage Drain Current
Forward Gate
– Source Leakage
Reverse Gate
– Source Leakage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Pulse Source Current
2
Diode Forward Voltage
1
Reverse Recovery Time
Reverse Recovery Charge
1
Forward Turn–On Time
PACKAGE CHARACTERISTICS
V
V/°C
V
S (
é
)
μ
A
nA
pF
nC
ns
A
V
ns
μ
C
nH
°C/W
BV
DSS
BV
DSS
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
R
θ
JC
R
θ
JPC
Notes
1) Pulse Test: Pulse Width
≤
300ms,
δ ≤
2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Internal Drain Inductance
(measured from 6mm down drain lead to centre of die)
Internal Source Inductance
(from 6mm down source lead to source bond pad)
THERMAL CHARACTERISTICS
Thermal Resistance Junction – Case
Thermal Resistance Junction – PC Board
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| IRFE430 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 500V 2.5A 18-Pin LLCC 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 500V 2.5A 18PIN LCC - Bulk 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 500V, 2.5A, LCC; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: No |
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