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参数资料
| 型号： | IRFF024 |
| 厂商： | International Rectifier |
| 英文描述： | 60V, N-CHANNEL |
| 中文描述： | 60V的N通道 |
| 文件页数： | 1/7页 |
| 文件大小： | 132K |
| 代理商： | IRFF024 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
8.0
5.7
32
20
0.16
±20
110
—
—
5.5
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (0.063 in. (1.6mm) from case for 10s)
0.98(typical)
g
PD - 90657
The HEXFET
technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt-
age control, very fast switching, ease of parelleling
and temperature stability of the electrical parameters.
They are well suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high energy pulse circuits.
o
C
A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
THRU-HOLE (TO-205AF) 60V, N-CHANNEL
TRANSISTORS
IRFF024
01/23/01
www.irf.com
1
TO-39
Product Summary
Part Number BVDSS R
DS(on)
IRFF024 60V 0.15
8.0A
I
D
Features:
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
For footnotes refer to the last page
相关PDF资料 |
PDF描述 |
|---|---|
| IRFI064 | TRANSISTOR N-CHANNEL(Vdss=60V, Rds(on)=0.017ohm, Id=45A*) |
| IRFI1010N | N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管) |
| IRFI1010 | Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=49A) |
| IRFI1310G | Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=22A) |
| IRFI1310N | N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFF034 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 16.2A I(D) | TO-205AF |
| IRFF110 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 3.5A 3-Pin TO-39 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 3.5A 3PIN TO-39 - Bulk 制造商:International Rectifier 功能描述:N CH MOSFET 100V 3.5A TO-20 制造商:International Rectifier 功能描述:MOSFET N TO-39 制造商:International Rectifier 功能描述:MOSFET, N, TO-39 制造商:International Rectifier 功能描述:N CH MOSFET, 100V, 3.5A, TO-205AF; Transistor Polarity:N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: No |
| IRFF110R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 3.5A I(D) | TO-205AF |
| IRFF111 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFF111R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 3.5A I(D) | TO-205AF |
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