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参数资料
| 型号： | IRFF9230 |
| 厂商： | INTERSIL CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | -4.0A, -200V, 0.800 Ohm, P-Channel Power MOSFET |
| 中文描述： | 4 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 文件页数： | 5/7页 |
| 文件大小： | 328K |
| 代理商： | IRFF9230 |
4-118
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
1.25
0.95
0.85
0.75
-40
0
T
J
, JUNCTION TEMPERATURE (
o
C)
40
N
B
80
120
160
1.05
1.15
I
D
= -250
μ
A
2000
400
00
-20
-50
C
1200
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1600
800
C
ISS
C
OSS
C
RSS
-10
-30
-40
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
V
GS
= 0V, f = 1MHz
I
D
, DRAIN CURRENT (A)
g
f
,
0
-3
-6
-9
-12
1.4
2.8
4.2
5.6
7.0
-15
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= -55
o
C
PULSE DURATION = 80
μ
s
0
-0.4
-1.0
-1.2
-1.6
-1.8
-0.6
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
-0.8
-1.4
-0.1
-1.0
I
S
,-100
T
J
= 25
o
C
T
J
= 150
o
C
0
-5
-10
-15
0
8
16
24
32
40
V
DS
= -160V
V
DS
= -100V
V
DS
= -40V
I
D
= -4A
Q
g(TOT)
, TOTAL GATE CHARGE (nC)
V
G
,
IRFF9230
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