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参数资料
| 型号： | IRFI530N |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET?? Power MOSFET |
| 中文描述： | 的HEXFET？？功率MOSFET |
| 文件页数： | 2/8页 |
| 文件大小： | 133K |
| 代理商： | IRFI530N |
IRFI530N
Parameter
Min. Typ. Max. Units
100
–––
–––
0.12
–––
–––
2.0
–––
6.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
6.4
–––
27
–––
37
–––
25
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 6.6A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 50V, I
D
= 9.0A
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 9.0A
V
DS
= 80V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 50V
I
D
= 9.0A
R
G
= 12
R
D
= 5.5
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
= 1.0MHz
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
–––
0.11
4.0
–––
25
250
100
-100
44
6.2
21
–––
–––
–––
–––
V
V/°C
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
C
iss
C
oss
C
rss
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
–––
–––
–––
–––
640
160
88
12
–––
–––
–––
–––
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 6.6A, V
GS
= 0V
T
J
= 25°C, I
F
= 9.0A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SM
V
SD
t
rr
Q
rr
–––
–––
–––
–––
130
650
1.3
190
970
V
ns
nC
nH
μA
nA
I
DSS
Drain-to-Source Leakage Current
I
GSS
ns
S
D
G
4.5
7.5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
–––
L
D
Internal Drain Inductance
–––
–––
–––
pF
Source-Drain Ratings and Characteristics
A
–––
–––
60
–––
–––
12
S
D
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 15V, starting T
J
= 25°C, L = 3.1mH
R
G
= 25
, I
AS
= 9.0A. (See Figure 12)
t=60s, =60Hz
I
SD
≤
9.0A, di/dt
≤
520A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Uses IRF530N data and test conditions
Pulse width
≤
300μs; duty cycle
≤
2%.
L
S
Internal Source Inductance
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