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参数资料
| 型号： | IRFM014AD84Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 2.8 A, 60 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 4/7页 |
| 文件大小： | 260K |
| 代理商： | IRFM014AD84Z |
N-CHANNEL
POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
Fig 11. Thermal Response
Fig 10. Max. Drain Current vs. Ambient Temperature
Fig 9. Max. Safe Operating Area
P
DM
t
1
t
2
IRFM014A
-75
-50
-25
0
25
50
75
100
125
150
175
0.8
0.9
1.0
1.1
1.2
@ Notes :
1. V
GS
= 0 V
2. I
D
= 250
A
BV
DSS
,
(Normalized)
Drain-Source
Breakdown
Voltage
T
J
, Junction Temperature [
oC]
-75
-50
-25
0
25
50
75
100
125
150
175
0.5
1.0
1.5
2.0
2.5
@ Notes :
1. V
GS
= 10 V
2. I
D
= 5 A
R
DS(on)
,
(Normalized)
Drain-Source
On-Resistance
T
J
, Junction Temperature [
oC]
10
-1
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
10
2
100 ms
DC
100
s
1 ms
10 ms
@ Notes :
1. T
A
= 25
oC
2. T
J
= 150
oC
3. Single Pulse
Operation in This Area
is Limited by R
DS(on)
I
D
,
Drain
Current
[A]
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0
1
2
3
I
D
,
Drain
Current
[A]
T
A
, Ambient Temperature [
oC]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
single pulse
0.2
0.1
0.01
0.02
0.05
D=0.5
@ Notes :
1. Zθ JA(t)=60
o C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
-T
A
=P
DM
*Zθ JA(t)
Z
θJA
(t)
,
Thermal
Response
t
1
, Square Wave Pulse Duration
[sec]
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFM014ATF | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| IRFM040 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 25A I(D) | TO-254AA |
| IRFM044 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 60V 35A 3-Pin(3+Tab) TO-254AA 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 35A 3PIN TO-254AA - Bulk |
| IRFM044D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 35A I(D) | TO-254VAR |
| IRFM044SCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 35A 3PIN TO-254AA - Bulk |
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