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参数资料
| 型号： | IRFM120A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | IEEE802.3af Compatible |
| 中文描述： | 2.3 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 4/7页 |
| 文件大小： | 269K |
| 代理商： | IRFM120A |
IRFM120A
-75
-50
-25
0
25
50
75
100
125
150
175
0.8
0.9
1.0
1.1
1.2
@ Notes :
1. V
GS
= 0 V
2. I
D
= 250
"
A
B
D
D
T
J
, Junction Temperature [
o
C]
-75
-50
-25
0
25
50
75
100
125
150
175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
@ Notes :
1. V
GS
= 10 V
2. I
D
= 4.6 A
R
D
D
T
J
, Junction Temperature [
o
C]
10
-1
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
10
2
100 ms
10
"
s
DC
100
"
s
1 ms
10 ms
@ Notes :
1. T
A
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
Operation in This Area
is Limited by R
DS(on)
I
D
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
I
D
T
A
, Ambient Temperature [
o
C]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
single pulse
0.2
0.1
0.01
0.02
0.05
D=0.5
@ Notes :
1. Z
!
JA
(t)=52
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
-T
A
=P
DM
*Z
!
JA
(t)
Z
!
(
t
1
, Square Wave Pulse Duration [sec]
N-CHANNEL
POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
Fig 11. Thermal Response
Fig 10. Max. Drain Current vs. Ambient Temperature
Fig 9. Max. Safe Operating Area
P
DM
t
1
t
2
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