- 您现在的位置：买卖IC网 > PDF目录378637 > IRFM224B (FAIRCHILD SEMICONDUCTOR CORP) 250V N-Channel MOSFET PDF资料下载
参数资料
| 型号： | IRFM224B |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 250V N-Channel MOSFET |
| 中文描述： | 920 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 1/8页 |
| 文件大小： | 705K |
| 代理商： | IRFM224B |
2001 Fairchild Semiconductor Corporation
November 2001
Rev. B, November 2001
I
IRFM224B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters and
switch mode power supplies.
Features
0.92A, 250V, R
DS(on)
= 1.1
@V
GS
= 10 V
Low gate charge ( typical 13.5 nC)
Low Crss ( typical 9.5 pF)
Fast switching
Improved dv/dt capability
! "
!
!
S
!
"
"
D
G
SOT-223
IRFM Series
G
D
S
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
IRFM224B
250
0.92
0.74
7.0
±
30
75
0.92
0.25
5.5
2.5
0.02
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 70°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JA
* When mounted on the minimum pad size recommended (PCB Mount)
Parameter
Typ
--
Max
50
Units
°C
/
W
Thermal Resistance, Junction-to-Ambient *
相关PDF资料 |
PDF描述 |
|---|---|
| IRFM240 | N?CHANNEL POWER MOSFET |
| IRFM240 | POWER MOSFET THRU-HOLE (TO-254AA) |
| IRFM5210 | P?CHANNEL MOSFET |
| IRFP150N | 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET |
| IRFP240B | 200V N-Channel MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFM224BTF_FP001 | 功能描述:MOSFET 250V Single RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFM240 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-254AA 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 200V 18A 3PIN TO-254AA - Bulk 制造商:International Rectifier 功能描述:Single N-Channel 200 V 125 W 60 nC Hexfet Power Mosfet Flange Mount - TO-254AA |
| IRFM240D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18A I(D) | TO-254VAR |
| IRFM240U | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18A I(D) | TO-254VAR |
| IRFM250 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 27.4A 3-Pin(3+Tab) TO-254AA 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 200V 27.4A 3PIN TO-254AA - Bulk 制造商:International Rectifier 功能描述:N CH MOSFET, 200V, 27.4A, TO-254AA; Transistor Polarity:N Channel; Continuous Drain Current Id:27.4A; Drain Source Voltage Vds:200V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: No |
发布紧急采购，3分钟左右您将得到回复。