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参数资料
| 型号： | IRFM240 |
| 厂商： | SEMELAB LTD |
| 元件分类： | JFETs |
| 英文描述： | N?CHANNEL POWER MOSFET |
| 中文描述： | 18 A, 200 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封装： | HERMETIC SEALED, METAL PACKAGE-3 |
| 文件页数： | 2/2页 |
| 文件大小： | 19K |
| 代理商： | IRFM240 |
Document Number 4145
Issue 1
IRFM240
2N7219
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter
STATIC ELECTRICAL RATINGS
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
Reference to 25
°
C
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
≥
15V
V
GS
= 0
I
D
= 1mA
I
D
= 11A
I
D
= 18A
I
D
= 250
μ
A
I
DS
= 11A
V
DS
= 160V
T
J
= 125
°
C
V
GS
= 20V
V
GS
=
–
20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
I
D
= 18A
V
DS
= 100V
V
DD
= 100V
I
D
= 18A
R
G
= 9.1
V
GS
= 10V
I
S
= 18A
V
GS
= 0
I
F
= 18A
d
i
/ d
t
≤
100A/
μ
s V
DD
≤
50V
T
J
= 25
°
C
T
J
= 25
°
C
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise stated)
Drain
–
Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain
–
Source On
–
State
Resistance
2
Gate Threshold Voltage
Forward Transconductance
2
Zero Gate Voltage Drain Current
Forward Gate
–
Source Leakage
Reverse Gate
–
Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate
–
Source Charge
Gate
–
Drain (
“
Miller
”
) Charge
Turn
–
On Delay Time
Rise Time
Turn
–
Off Delay Time
Fall Time
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Pulse Source Current
1
Diode Forward Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
2
Forward Turn
–
On Time
PACKAGE CHARACTERISTICS
200
0.29
0.18
0.25
4.0
2.0
6.1
25
250
100
–
100
1300
400
130
60
10.6
37.6
20
105
58
67
18
72
1.5
500
5.3
Negligible
4.0
4.0
V
V/
°
C
V
(
)
S
(
μ
A
nA
pF
nC
ns
A
V
ns
μ
C
nH
BV
DSS
BV
DSS
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
1) Repetitive Rating
–
Pulse width limited by Maximum Junction Temperature
2) Pulse Test: Pulse Width
≤
300
μ
s,
δ ≤
2%.
DYNAMIC CHARACTERISTICS
Internal Drain Inductance
Measured from drain lead (6mm / 0.25in from package) to
Internal Source Inductance
source lead (6mm / 0.25in from package).
相关PDF资料 |
PDF描述 |
|---|---|
| IRFM240 | POWER MOSFET THRU-HOLE (TO-254AA) |
| IRFM5210 | P?CHANNEL MOSFET |
| IRFP150N | 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET |
| IRFP240B | 200V N-Channel MOSFET |
| IRFP244B | 250V N-Channel MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFM240D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18A I(D) | TO-254VAR |
| IRFM240U | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18A I(D) | TO-254VAR |
| IRFM250 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 27.4A 3-Pin(3+Tab) TO-254AA 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 200V 27.4A 3PIN TO-254AA - Bulk 制造商:International Rectifier 功能描述:N CH MOSFET, 200V, 27.4A, TO-254AA; Transistor Polarity:N Channel; Continuous Drain Current Id:27.4A; Drain Source Voltage Vds:200V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: No |
| IRFM250_06 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:N–CHANNEL POWER MOSFET |
| IRFM250D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 27A I(D) | TO-254VAR |
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