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参数资料
| 型号： | IRFM5210 |
| 厂商： | SEMELAB LTD |
| 元件分类： | JFETs |
| 英文描述： | P?CHANNEL MOSFET |
| 中文描述： | 34 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封装： | TO-254AA, 3 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 16K |
| 代理商： | IRFM5210 |
IRFM5210
Document Number 2612
Issue 1
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter
STATIC ELECTRICAL RATINGS
Test Conditions
Min.
Typ.
Max.
Unit
–100
0.07
– 2.0
10
–4.0
–25
–250
–100
100
2700
790
450
180
25
97
28
150
100
120
100
–34
–136
–1.6
260
1.8
17
86
79
81
170
1.2
5.0
17
4.5
7.5
V
GS
= 0V
I
D
= –250
μ
A
V
GS
= –10V
I
D
= –21A
V
DS
= V
GS
V
DS
= –15V
V
DS
= –100V
V
DS
= –80V
I
D
= –250
μ
A
I
D
= –21A
V
GS
= 0V
V
GS
= 0V
T
J
= 125°C
V
GS
= –20V
V
GS
= 20V
V
GS
= 0V
V
DS
= –25V
f = 1MHz
I
D
= –21A
V
DS
= –80V
V
GS
= –10V
V
DD
= –50V
I
D
= –21A
R
G
= 2.5
R
G
= 2.4
V
GS
= –10V
MOSFET symbol showing the
integral reverse p-n junction
T
J
= 25°C, I
S
= 21A, V
GS
= 0V
d
i
/ d
t
≤
–100A/
μ
s
T
J
= 25°C, I
F
= -21A
negligible
Between lead, 6mm(0.25in.) from
package and center of die contact
ELECTRICAL CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Static Drain to Source On
Resistance 2
Gate Threshold Voltage
Forward Transconductance
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
SOURCE – DRAIN CHARACTERISTICS
Continuous Source Current
Pulse Source Current
1
Diode Forward Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
2
Forward Turn–On Time
Internal Drain
Internal Source Inductance
V
V
S
μ
A
nA
pF
nC
ns
A
V
ns
μ
C
—
nH
V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
Notes
1) Repetitive rating; pulse width limited by max. junction temperature.
2) Pulse Test: Pulse Width
≤
300ms,
δ ≤
2%
PACKAGE CHARACTERISTICS
D
S
G
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFM540 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:N-Channel |
| IRFM7150 | 制造商:International Rectifier 功能描述:HEXFET, HI-REL - Bulk |
| IRFM8240 | 制造商:IRF 制造商全称:International Rectifier 功能描述:POWER MOSFET THRU-HOLE (TO-254AA) |
| IRFM9130 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 11A I(D) | TO-254AA |
| IRFM9140 | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 100V 18A 3-Pin(3+Tab) TO-254AA 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 18A 3PIN TO-254AA - Bulk 制造商:International Rectifier 功能描述:P CH MOSFET, -100V, 18A, TO-254AA; Transistor Polarity:P Channel; Continuous Drain Current Id:-18A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V ;RoHS Compliant: No |
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