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参数资料
型号： IRFN9140
厂商： International Rectifier
英文描述： POWER MOSFET N-CHANNEL(BVdss=-100V, Rds(on)=0.20ohm, Id=-18A)
中文描述： 功率MOSFET N沟道（BVdss \u003d- 100V的，的Rds（on）\u003d 0.20ohm，身份证\u003d- 18A条）
文件页数： 1/2页
文件大小： 23K
代理商： IRFN9140
IRFN9140SMD
Prelim. 7/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.uk
V
GS
I
D
I
D
I
DM
P
D
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Single Pulse Avalanche Energy
2
Peak Diode Recovery
3
Operating and Storage Temperature Range
Package Mounting Surface Temperature (for 5 sec)
Thermal Resistance Junction to Case
Thermal Resistance Junction to PCB (Typical)
(V
GS
= 0 , T
case
= 25°C)
(V
GS
= 0 , T
case
= 100°C)
E
AS
dv/dt
T
J
, T
stg
T
L
R
q
JC
R
q
J–PCB
±20V
–14A
–9.0A
–56A
75W
0.6W/°C
500mJ
–5.0V/ns
–55 to 150°C
300°C
1.67°C/W
4°C/W
MECHANICAL DATA
Dimensions in mm (inches)
P–CHANNEL
POWER MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
FEATURES
HERMETICALLY SEALED SURFACE
MOUNT PACKAGE
SMALL FOOTPRINT – EFFICIENT USE OF
PCB SPACE.
SIMPLE DRIVE REQUIREMENTS
LIGHTWEIGHT
HIGH PACKING DENSITIES
SMD1
Pad 1 – Source
Pad 2 – Drain
Pad 3 – Gate
Notes
1) Pulse Test: Pulse Width
￡
300ms,
d ￡
2%
2) @ V
DD
= –25V , L
3
3.8mH , R
G
= 25
W
, Peak I
L
= –14A , Starting T
J
= 25°C
3) @ I
SD
￡
–14A , di/dt
￡
–100A/
m
s , V
DD
￡
BV
DSS
, T
J
￡
150°C , SUGGESTED R
G
= 9.1
W
V
DSS
I
D(cont)
R
DS(on)
–100V
–14A
0.020
W
Note:
IRFxxxSM also available with
pins 1 and 3 reversed.
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