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| 型号： | IRFR540ZTRLPBF |
| 厂商： | International Rectifier |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 35A DPAK |
| 标准包装： | 3,000 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 35A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 28.5 毫欧 @ 21A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 50µA |
| 闸电荷(Qg) @ Vgs： | 59nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1690pF @ 25V |
| 功率 - 最大： | 91W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
PD - 96141B
IRFR540ZPbF
Features
l Advanced Process Technology
IRFU540ZPbF
l
l
l
l
l
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
HEXFET ? Power MOSFET
D
V DSS = 100V
l Halogen-Free
Description
This HEXFET ? Power MOSFET utilizes the latest
processing techniques to achieve extremely low
G
S
R DS(on) = 28.5m ?
I D = 35A
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
Absolute Maximum Ratings
Parameter
I D @ T C = 25°C Continuous Drain Current, V GS @ 10V (Silicon Limited)
I D @ T C = 100°C Continuous Drain Current, V GS @ 10V (Silicon Limited)
D-Pak
IRFR540ZPbF
Max.
35
25
I-Pak
IRFU540ZPbF
Units
A
I DM
Pulsed Drain Current
140
P D @T C = 25°C Power Dissipation
Linear Derating Factor
91
0.61
W
W/°C
V GS
Gate-to-Source Voltage
± 20
V
E AS (Thermally limited) Single Pulse Avalanche Energy
39
mJ
E AS (Tested )
Single Pulse Avalanche Energy Tested Value
75
I AR
Avalanche Current
See Fig.12a, 12b, 15, 16
A
E AR
T J
T STG
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Reflow Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
-55 to + 175
300
10 lbf in (1.1N m)
mJ
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
Junction-to-Case
–––
1.64
R θ JA
R θ JA
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
–––
–––
40
110
°C/W
HEXFET ? is a registered trademark of International Rectifier.
www.irf.com
1
09/30/10
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFR540ZTRPBF | 功能描述:MOSFET MOSFT 100V 35A 28.5mOhm 39nC Qg RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR540ZTRRPBF | 功能描述:MOSFET 100V SINGLE N-CH 28.5mOhms 39nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR5410 | 制造商:International Rectifier 功能描述: |
| IRFR5410HR | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 13A 3PIN DPAK - Rail/Tube |
| IRFR5410PBF | 功能描述:MOSFET 1 P-CH -100V HEXFET 26mOhms 70nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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