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参数资料
| 型号： | IRFR9024 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor（-8.8A，-60V，0.28Ω）(P沟道增强型MOS场效应管（漏电流-8.8A, 漏源电压-60V，导通电阻0.28Ω）) |
| 中文描述： | 8.8 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封装： | DPAK-3 |
| 文件页数： | 2/6页 |
| 文件大小： | 379K |
| 代理商： | IRFR9024 |
I
IRFR9024 Rev. A
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the drain tab.
R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
a) R
θ
JA
= 38oC/W when mounted on a
1 in2 pad of 2oz copper.
b) R
θ
JA
= 96oC/W when mounted on a
minimum pad.
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