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| 型号： | IRFR9120NTRL |
| 厂商： | International Rectifier |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 100V 6.6A DPAK |
| 标准包装： | 3,000 |
| 系列： | HEXFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 480 毫欧 @ 3.9A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 27nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 350pF @ 25V |
| 功率 - 最大： | 40W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
PD - 9.1507A
PRELIMINARY
IRFR/U9120N
HEXFET ? Power MOSFET
l
l
l
Ultra Low On-Resistance
P-Channel
Surface Mount (IRFR9120N)
D
V DSS = -100V
l
l
l
l
Straight Lead (IRFU9120N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
G
S
R DS(on) = 0.48 ?
I D = -6.6A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
D -P ak
I-P ak
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter
T O -2 52 A A
Max.
T O -25 1 A A
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ -10V
-6.6
I D @ T C = 100°C
I DM
P D @T C = 25°C
V GS
E AS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ -10V
Pulsed Drain Current ?
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ?
Avalanche Current ?
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ?
-4.2
-26
40
0.32
± 20
100
-6.6
4.0
-5.0
A
W
W/°C
V
mJ
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to + 150
300 (1.6mm from case )
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
Junction-to-Case
–––
3.1
R θ JA
R θ JA
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient
–––
–––
50
110
°C/W
3/16/98
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFR9120NTRLPBF | 功能描述:MOSFET MOSFT PCh -6.5A 480mOhm 18nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR9120NTRPBF | 功能描述:MOSFET 20V -100V P-CH FET 480mOhms 18nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR9120NTRPBF | 制造商:International Rectifier 功能描述:P CHANNEL MOSFET -100V 6.6A D-PAK |
| IRFR9120NTRR | 功能描述:MOSFET P-CH 100V 6.6A DPAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRFR9120NTRRPBF | 制造商:International Rectifier 功能描述: |
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