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| 型号： | IRFS11N50A |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 11A D2PAK |
| 标准包装： | 1,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 11A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 520 毫欧 @ 6.6A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 52nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1423pF @ 25V |
| 功率 - 最大： | 170W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 管件 |
| 其它名称： | *IRFS11N50A |
IRFS11N50A, SiHFS11N50A
www.vishay.com
Power MOSFET
Vishay Siliconix
PRODUCT SUMMARY
V DS (V)
R DS(on) ( ? )
V GS = 10 V
500
0.52
FEATURES
? Low Gate Charge Q g results in Simple Drive
Requirement
? Improved Gate, Avalanche and Dynamic dV/dt
Available
Q g (Max.) (nC)
52
Ruggedness
Q gs (nC)
13
? Fully Characterized
Capacitance and
Available
Q gd (nC)
Configuration
18
Single
Avalanche Voltage and Current
? Effective C oss Specified
D 2 PAK
G D
S
(TO-263)
G
D
S
N-Channel MOSFET
? Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note ?
* This datasheet provides information about parts that are ?
RoHS-compliant and/or parts that are non-RoHS-compliant. For ?
example, parts with lead (Pb) terminations are not RoHS-compliant. ?
Please see the information/tables in this datasheet for details.
APPLICATIONS
? Switch Mode Power Supply (SMPS)
? Uninterruptible Power Supply
? High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
? Two Transistor Forward
? Half and Full Bridge
? Power Factor Correction Boost
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
D 2 PAK (TO-263)
SiHFS11N50A-GE3
IRFS11N50APbF
D 2 PAK (TO-263)
SiHFS11N50ATRR-GE3 a
IRFS11N50ATRRP a
D 2 PAK (TO-263)
SiHFS11N50ATRL-GE3 a
IRFS11N50ATRLP a
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
500
± 30
UNIT
V
Continuous Drain Current
V GS at 10 V
T C = 25 °C
T C = 100 °C
I D
11
7.0
A
Pulsed Drain Current a
I DM
44
Linear Derating Factor
1.3
W/°C
Single Pulse Avalanche Energy b
Repetitive Avalanche Current a
Repetitive Avalanche Energy a
E AS
I AR
E AR
275
11
17
mJ
A
mJ
Maximum Power Dissipation
T C = 25 °C
P D
170
W
Peak Diode Recovery
dV/dt c
dV/dt
6.9
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d
for 10 s
T J , T stg
- 55 to + 150
300
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T J = 25 °C, L = 4.5 mH, R g = 25 ? , I AS = 11 A (see fig. 12).
c. I SD ? 11 A, dI/dt ? 140 A/μs, V DD ? V DS , T J ? 150 °C.
d. 1.6 mm from case.
S13-1927-Rev. E, 09-Sep-13
1
Document Number: 91286
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFS11N50APBF | 功能描述:MOSFET N-Chan 500V 11 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFS11N50ATRL | 功能描述:MOSFET N-Chan 500V 11 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFS11N50ATRLP | 功能描述:MOSFET N-Chan 500V 11 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFS11N50ATRLPBF | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Power MOSFET |
| IRFS11N50ATRR | 功能描述:MOSFET N-CH 500V 11A D2PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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