参数资料
型号: IRFS530
厂商: Fairchild Semiconductor Corporation
英文描述: Advanced Power MOSFET
中文描述: 先进的功率MOSFET
文件页数: 1/7页
文件大小: 261K
代理商: IRFS530
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175 Operating Temperature
Lower Leakage Current : 10
Lower R
DS(ON)
: 0.092 (Typ.)
A (Max.) @ V
DS
= 100V
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
R
JC
R
JA
θ
/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
Continuous Drain Current (T
C
=100
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
)
)
)
Characteristic
Value
100
10.7
7.6
56
2
0
+
_
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
A
TO-220F
1.Gate 2. Drain 3. Source
3
2
1
μ
O
1
O
O
1
O
1
2
O
3
Ο
C
Ο
C
Ο
C
Ο
C
Ο
C
Ο
C
Ο
C
θ
IRFS530A
BV
DSS
= 100 V
R
DS(on)
= 0.11
I
D
= 10.7 A
229
10.7
3.2
6.5
32
0.21
- 55 to +175
300
4.69
62.5
--
--
1999 Fairchild Semiconductor Corporation
Rev. B
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IRFS540 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Advanced Power MOSFET
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IRFS541 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 17A I(D) | SOT-186