参数资料
型号: IRFU214
厂商: International Rectifier
英文描述: Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=2.2A)
中文描述: 功率MOSFET(减振钢板基本\u003d 250V,的Rds(on)\u003d 2.0ohm,身份证\u003d 2.2a在)
文件页数: 6/6页
文件大小: 52K
代理商: IRFU214
4-388
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FIGURE 14. SWITCHING TIME TEST CIRCUIT
FIGURE 15. RESISTIVE SWITCHING WAVEFORMS
FIGURE 16. GATE CHARGE TEST CIRCUIT
FIGURE 17. GATE CHARGE WAVEFORMS
Test Circuits and Waveforms
(Continued)
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
0.3
μ
F
12V
BATTERY
50k
V
DS
S
DUT
D
G
I
G(REF)
0
(ISOLATED
SUPPLY)
V
DS
0.2
μ
F
CURRENT
REGULATOR
I
D
CURRENT
SAMPLING
RESISTOR
I
G
CURRENT
SAMPLING
RESISTOR
SAME TYPE
AS DUT
Q
g(TOT)
Q
gd
Q
gs
V
DS
0
V
GS
V
DD
I
G(REF)
0
IRFR214, IRFU214
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相关代理商/技术参数
参数描述
IRFU214A 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.2A I(D) | TO-251AA
IRFU214B 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:250V N-Channel MOSFET
IRFU214BTU 制造商:Fairchild Semiconductor Corporation 功能描述:
IRFU214BTU_FP001 功能描述:MOSFET 250V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFU214PBF 功能描述:MOSFET N-Chan 250V 2.2 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube