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参数资料
| 型号： | IRFY220SM |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | CHIP |
| 中文描述： | 晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 5A条（丁）|芯片 |
| 文件页数： | 1/1页 |
| 文件大小： | 11K |
| 代理商： | IRFY220SM |
IRFY210
V
DSS
= 200V
I
D
= 1.8A
R
DS(ON)
= 1.725
All Semelab hermetically sealed products can be
processed in accordance with the requirements
of BS, CECC and JAN, JANTX, JANTXV and
JANS specifications.
V
DSS
I
D
P
D
R
DS(ON)
C
ISS
Q
g
t
td(on)
t
tr
t
td(off)
t
f
Parameter
Drain – Source Breakdown Voltage
Continuous Drain Current
Power Dissipation
Static Drain – Source On–State Resistance
Input Capacitance
Total Gate Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Min.
Typ.
140
Max.
200
1.8
11
1.725
6.2
15
20
30
20
Units
V
A
W
pF
nC
ns
ns
ns
ns
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk
.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
13-Sep-02
TO257AB (TO220M)
PINOUTS
1 – Gate
2 – Drain
Case – Source
N-Channel MOSFET in
a Hermetically sealed
TO257AB Metal Package.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Dimensions in mm (inches).
1
1
1
1
2.54 (0.1)
BSC
3.70Dia. Nom
1
2
3
0.8
(0.03)
2.70
(0.106)
1.0
(0.039)
4.6 (0.18)
10.6 (0.42)
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