参数资料
型号: IRFY340M
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 6.9A I(D) | TO-220
中文描述: 晶体管| MOSFET的| N沟道| 400V五(巴西)直| 6.9AI(四)|至220
文件页数: 1/1页
文件大小: 11K
代理商: IRFY340M
IRFY310
V
DSS
= 400V
I
D
= 1.2A
R
DS(ON)
= 4.15
All Semelab hermetically sealed products can be
processed in accordance with the requirements
of BS, CECC and JAN, JANTX, JANTXV and
JANS specifications.
V
DSS
I
D
P
D
R
DS(ON)
C
ISS
Q
g
t
td(on)
t
tr
t
td(off)
t
f
Parameter
Drain – Source Breakdown Voltage
Continuous Drain Current
Power Dissipation
Static Drain – Source On–State Resistance
Input Capacitance
Total Gate Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Min.
Typ.
170
Max.
400
1.2
11
4.15
8.4
15
20
35
30
Units
V
A
W
pF
nC
ns
ns
ns
ns
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk
.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
13-Sep-02
TO257AB (TO220M)
PINOUTS
1 – Gate
2 – Drain
Case – Source
N-Channel MOSFET in
a Hermetically sealed
TO257AB Metal Package.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Dimensions in mm (inches).
1
1
1
1
2.54 (0.1)
BSC
3.70Dia. Nom
1
2
3
0.8
(0.03)
2.70
(0.106)
1.0
(0.039)
4.6 (0.18)
10.6 (0.42)
相关PDF资料
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IRFY240C N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package.
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IRFY420SM TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.5A I(D) | CHIP
IRFY430C TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) | TO-257AA
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