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| 型号： | IRFY430M-T257 |
| 英文描述： | N-Channel Power MOSFET For HI-REL Application(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω)(N沟道功率MOS场效应管,HI-REL应用(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω)) |
| 中文描述： | N沟道功率MOSFET为高可靠性应用（减振钢板基本：500V电压，身份证（续）：4.5A时，RDS（上）：1.65Ω）（不适用马鞍山沟道功率场效应管，高可靠性应用（减振钢板基本：500V电压，编号（续）：4.5A时，RDS（上）：1.65Ω）） |
| 文件页数： | 2/2页 |
| 文件大小： | 20K |
| 代理商： | IRFY430M-T257 |
Parameter
STATIC ELECTRICAL RATINGS
Test Conditions
Min.
Typ.
Max.
Unit
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Pulse Source Current
2
IRFY430M-T257
Prelim. 1/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
V
GS
= 0
Reference to 25
°
C
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
3
15V
V
GS
= 0
I
D
= 1mA
I
D
= 2.4A
I
D
= 3.7A
I
D
= 250
m
A
I
DS
= 2.4A
V
DS
= 0.8BV
DSS
T
J
= 125
°
C
V
GS
= 20V
V
GS
=
–
20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DS
= 0.5BV
DSS
V
GS
= 10V
V
DS
= 0.5BV
DSS
V
DD
= 250V
I
D
=3.7A
R
G
= 7.5
W
V
GS
= 10V
I
D
=3.7A
I
D
= 3.7A
I
S
= 3.7A
V
GS
= 0
I
S
= 3.7A
d
i
/ d
t
￡
100A/
m
s V
DD
￡
50V
T
C
= 25
°
C
T
J
= 25
°
C
ELECTRICAL CHARACTERISTICS
(Tamb= 25
°
C unless otherwise stated)
V
V/
°
C
W
V
S
(
(
W
)
m
A
nA
pF
nC
nC
ns
A
V
ns
m
C
nH
Drain
–
Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain
–
Source On
–
State
Resistance
1
Gate Threshold Voltage
Forward Transconductance
1
Zero Gate Voltage Drain Current
Forward Gate
–
Source Leakage
Reverse Gate
–
Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
1
Gate
–
Source Charge
1
Gate
–
Drain (
“
Miller
”
) Charge
1
Turn
–
On Delay Time
Rise Time
Turn
–
Off Delay Time
Fall Time
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn
–
On Time
500
0.78
1.65
1.84
4
2
1.5
25
250
100
–
100
610
135
65
19.8
29.5
2.2
5.5
4.6
19.7
35
30
55
30
3.7
14
1.4
900
7.0
Negligible
8.7
8.7
BV
DSS
D
BV
DSS
D
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
Notes
1) Pulse Test: Pulse Width
￡
300ms,
d ￡
2%
2) Repetitive Rating
–
Pulse width limited by maximum junction temperature.
DYNAMIC CHARACTERISTICS
Internal Drain Inductance
(6mm down drain lead to centre of die)
Internal Source Inductance
(6mm down source lead to centre of source bond pad)
PACKAGE CHARACTERISTICS
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|---|---|
| IRFY440 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 500V 7A 3PIN TO-257 - Bulk 制造商:International Rectifier 功能描述:Single N-Channel 500 V 100 W 68.5 nC Hexfet Power Mosfet Flange Mount - TO-257AA 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 500V, 7A TO-257AA, Transistor Polarity:N Channel, Continuous D |
| IRFY440C | 制造商:International Rectifier 功能描述: 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 500V 7A 3PIN TO-257 - Bulk |
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| IRFY440CMSCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 500V 7A 3PIN TO-257 - Bulk |
| IRFY440CMSCX | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 500V 7A 3PIN TO-257 - Bulk |
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