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参数资料
| 型号： | IRFZ14STRR |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 10A D2PAK |
| 标准包装： | 800 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 10A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 200 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 11nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 300pF @ 25V |
| 功率 - 最大： | 3.7W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 带卷 (TR) |
IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
FEATURES
? Halogen-free According to IEC 61249-2-21
V DS (V)
60
Definition
R DS(on) ( ? )
Q g (Max.) (nC)
Q gs (nC)
Q gd (nC)
Configuration
I 2 PAK (TO-262)
V GS = 10 V
D 2 PAK (TO-263)
11
3.1
5.8
Single
0.20
D
? Advanced Process Technology
? Surface Mount (IRFZ14S, SiHFZ14S)
? Low-Profile Through-Hole (IRFZ14L, SiHFZ14L)
? 175 °C Operating Temperature
? Fast Switching
? Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extermely low
on resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
G
D
S
G
D
S
G
with an extermely efficient reliabel deviece for use in a wide
variety of applications.
The D 2 PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
S
N-Channel MOSFET
highest power capability and lowest possible on-resistance
in any existing surface mount package. The D 2 PAK is
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0 W
in a typical surface mount application.
The through-hole version (IRFZ14L, SiHFZ44L) is available
for low profile applications.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
D 2 PAK (TO-263)
SiHFZ14S-GE3
IRFZ14SPbF
SiHFZ14S-E3
D 2 PAK (TO-263)
SiHFZ14STRL-GE3 a
IRFZ14STRLPbF a
SiHFZ14STL-E3 a
I 2 PAK (TO-262)
SiHFZ14L-GE3
IRFZ14LPbF
SiHFZ14L-E3
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
60
± 20
UNIT
V
Continuous Drain Current
V GS at 10 V
T C = 25 °C
T C = 100 °C
I D
10
7.2
A
Pulsed Drain Current a
I DM
40
Linear Derating Factor
0.29
W/°C
Single Pulse Avalanche Energy b
E AS
47
mJ
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount) e
Peak Diode Recovery dV/dt c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
T C = 25 °C
T A = 25 °C
for 10 s
P D
dV/dt
T J , T stg
43
3.7
4.5
- 55 to + 175
300 d
W
V/ns
°C
Notes
b. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
c. V DD = 25 V, starting T J = 25 °C, L = 548 μH, R g = 25 ? , I AS = 10 A (see fig. 12).
d. I SD ? 10 A, dI/dt ? 90 A/μs, V DD ? V DS , T J ? 175 °C.
e. 1.6 mm from case.
f. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90365
S11-1063-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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