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参数资料
| 型号： | IRFZ48NSTRR |
| 厂商： | International Rectifier |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 64A D2PAK |
| 标准包装： | 800 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 64A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 14 毫欧 @ 32A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 81nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1970pF @ 25V |
| 功率 - 最大： | 3.8W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 带卷 (TR) |
PD - 9.1408B
IRFZ48NS
l
l
Advanced Process Technology
Surface Mount (IRFZ48NS)
IRFZ48NL
HEXFET ? Power MOSFET
l
l
l
Low-profile through-hole (IRFZ48NL)
175°C Operating Temperature
Fast Switching
D
V DSS = 55V
l Fully Avalanche Rated
Description
Advanced HEXFET ? Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D 2 Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-resistance
G
S
R DS(on) = 0.014 ?
I D = 64A
D P ak
in any existing surface mount package. The D 2 Pak is
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0W
in a typical surface mount application.
The through-hole version (IRFZ48NL) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
Max.
2
T O -26 2
Units
I D @ T C = 25 ° C
Continuous Drain Current, V GS @ 10V
64
I D @ T C = 100 ° C
I DM
P D @T A = 25 ° C
P D @T C = 25 ° C
V GS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current ?
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current ?
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ?
45
210
3.8
130
0.83
± 20
32
13
5.0
A
W
W
W/ ° C
V
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to + 175
300 (1.6mm from case )
° C
Thermal Resistance
Parameter
Typ.
Max.
Units
R qJC
R qJA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
–––
–––
1.15
40
° C/W
www.irf.com
1
03/12/01
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相关代理商/技术参数 |
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|---|---|
| IRFZ48NSTRRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 64A 3-Pin(2+Tab) D2PAK T/R 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 64A 3PIN D2PAK - Tape and Reel |
| IRFZ48NSTRRPBF | 功能描述:MOSFET 55V 1 N-CH HEXFET 14mOhms 54nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFZ48PBF | 功能描述:MOSFET N-Chan 60V 50 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFZ48R | 功能描述:MOSFET N-Chan 60V 50 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFZ48RL | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET |
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