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参数资料
| 型号： | IRG4CF50WB |
| 英文描述： | TRANSISTOR | IGBT | N-CHAN | 900V V(BR)CES | CHIP |
| 中文描述： | 晶体管| IGBT的|正陈| 900V五（巴西）国际消费电子展|芯片 |
| 文件页数： | 1/8页 |
| 文件大小： | 188K |
| 代理商： | IRG4CF50WB |
Parameter
Max.
600
23
12
92
92
± 20
180
100
42
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
V
mJ
-55 to + 150
300 (0.063 in. (1.6mm from case )
°C
IRG4BC30W-S
INSULATED GATE BIPOLAR TRANSISTOR
PD - 91790
E
C
G
n-channel
Features
Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
Industry-benchmark switching losses improve
efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
Benefits
Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
V
CES
= 600V
V
CE(on) typ.
= 2.10V
@V
GE
= 15V, I
C
= 12A
8/13/98
Parameter
Typ.
–––
–––
Max.
1.2
40
Units
°C/W
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient, ( PCB Mounted,steady-state)*
Thermal Resistance
Absolute Maximum Ratings
W
D Pak
www.irf.com
1
*
When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering
techniques refer to application note #AN-994.
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