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参数资料
| 型号： | IRG4PF50WDPBF |
| 厂商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 中文描述： | 绝缘栅双极型晶体管，超快软恢复二极管 |
| 文件页数： | 10/10页 |
| 文件大小： | 639K |
| 代理商： | IRG4PF50WDPBF |
IRG4PF50WDPbF
10
www.irf.com
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
04/04
TO-247AC Part Marking Information
EXAMPLE:
ASSEMBLED ON WW 35, 2000
IN THE ASSEMBLY LINE "H"
LOT CODE 5657
WITH ASSEMBLY
THIS IS AN IRFPE30
035H
LOGO
INTERNATIONAL
RECTIFIER
IRFPE30
LOT CODE
ASSEMBLY
56 57
PART NUMBER
DATE CODE
YEAR 0 = 2000
WEEK 35
LINE H
Note:
"P" in assembly line
position indicates "Lead-Free"
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
相关PDF资料 |
PDF描述 |
|---|---|
| IRG4PF50WPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG4PF50WD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRG4PH30KD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) |
| IRG4PH30 | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) |
| IRG4PH30K | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRG4PF50WPBF | 功能描述:IGBT 晶体管 900V Warp 20-100kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRG4PG40FD | 制造商:IRF 制造商全称:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRG4PG40KD | 制造商:IRF 制造商全称:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRG4PG40MD | 制造商:IRF 制造商全称:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRG4PG40SD | 制造商:IRF 制造商全称:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
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