- 您现在的位置：买卖IC网 > PDF目录384501 > IRGBC40S (International Rectifier) INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=31A) PDF资料下载
参数资料
| 型号： | IRGBC40S |
| 厂商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=31A) |
| 中文描述： | 绝缘栅双极晶体管（VCES和\u003d 600V的，@和VGE \u003d 15V的，集成电路\u003d 31A条） |
| 文件页数： | 2/6页 |
| 文件大小： | 249K |
| 代理商： | IRGBC40S |
C-16
IRGBC40S
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
ts
Total Switching Loss
L
E
Internal Emitter Inductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Min. Typ. Max. Units
—
62
—
10
—
27
—
28
—
50
—
1100 1500
—
620
1100
—
1.0
—
12
—
13
—
29
—
53
—
1600
—
1200
—
22
—
7.5
—
1600
—
140
—
20
Conditions
90
15
40
—
—
I
C
= 31A
V
CC
= 400V
V
GE
= 15V
T
J
= 25°C
I
C
= 31A, V
CC
= 480V
V
GE
= 15V, R
G
= 10
Energy losses include "tail"
nC
See Fig. 8
ns
—
—
20
—
—
—
—
—
—
—
—
—
mJ
See Fig. 9, 10, 11, 14
T
J
= 150°C,
I
C
= 31A, V
CC
= 480V
V
GE
= 15V, R
G
= 10
Energy losses include "tail"
See Fig. 10, 14
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
ns
mJ
nH
pF
See Fig. 7
Notes:
V
CC
=80%(V
CES
), V
GE
=20V, L=10μH,
R
G
= 10
, ( See fig. 13a )
Repetitive rating; V
GE
=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
Repetitive rating; pulse width limited
by maximum junction temperature.
Pulse width
≤
80μs; duty factor
≤
0.1%.
Pulse width 5.0μs,
single shot.
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
V
(BR)CES
/
T
J
Temp. Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
600
—
20
—
—
0.75
—
1.6
—
2.2
—
1.7
3.0
—
—
-9.3
12
21
—
—
—
—
—
—
Conditions
—
—
—
1.8
—
—
5.5
—
—
250
1000
±100
V
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0A
V
GE
= 0V, I
C
= 1.0mA
I
C
= 31A
I
C
= 60A
I
C
= 31A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
V
CE
= V
GE
, I
C
= 250μA
V
CE
= 100V, I
C
= 31A
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
V
GE
= ±20V
V/°C
V
GE
= 15V
See Fig. 2, 5
V
V
GE(th)
V
GE(th)
/
T
J
Temp. Coeff. of Threshold Voltage
g
fe
Forward Transconductance
I
CES
Zero Gate Voltage Collector Current
Gate Threshold Voltage
mV/°C
S
μA
I
GES
Gate-to-Emitter Leakage Current
nA
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Next Data Sheet
Index
Previous Datasheet
To Order
相关PDF资料 |
PDF描述 |
|---|---|
| IRGBF20 | INSULATED GATE BIPOLAR TRANSISTOR(Vce=900V, @Vge=15V, Ic=5.3A) |
| IRGBF20F | Aluminum Polymer SMT Capacitor; Capacitance: 470uF; Voltage: 6.3V; Case Size: 10x10 mm; Packaging: Tape & Reel |
| IRGI4055PBF | PDP TRENCH IGBT |
| IRGI4061DPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRGI4065PBF | PDP TRENCH IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRGBC40U | 制造商:IRF 制造商全称:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRGBC46 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 50A I(C) | TO-220AB |
| IRGBF20 | 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vce=900V, @Vge=15V, Ic=5.3A) |
| IRGBF20F | 制造商:IRF 制造商全称:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRGBF30 | 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=11A) |
发布紧急采购，3分钟左右您将得到回复。