参数资料
型号: IRGPC60LC
文件页数: 7/9页
文件大小: 146K
代理商: IRGPC60LC
Fig. 14
- Typical Reverse Recovery vs. di
f
/dt
Fig. 15
- Typical Recovery Current vs. di
f
/dt
Fig. 16
- Typical Stored Charge vs. di
f
/dt
Fig. 17
- Typical di
(rec)M
/dt vs. di
f
/dt
IRGPC30KD2
0
200
400
600
100
1000
di /dt - (A/μs)
R
Q
I = 6.0A
I = 12A
I = 24A
V = 200V
T = 125°C
T = 25°C
10
100
1000
10000
100
1000
di /dt - (A/μs)
d
I = 12A
I = 24A
I = 6.0A
V = 200V
T = 125°C
T = 25°C
0
40
80
120
160
100
1000
dif
t
r
I = 24A
I = 12A
I = 6.0A
V = 200V
T = 125°C
T = 25°C
1
10
100
100
1000
di /dt - (A/μs)
I
I
I = 6.0A
I = 12A
I = 24A
V = 200V
T = 125°C
T = 25°C
相关PDF资料
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IRGPC60M
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IRGPC30KD2 Insulated Gate Bipolar Transistors (IGBTs) with Ultrafast Soft Recovery Diode(带超快软恢复二极管的绝缘栅双极型晶体管)
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