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参数资料
| 型号： | IRHF58130 |
| 厂商： | International Rectifier |
| 元件分类： | 功率晶体管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N沟道的PowerTrench MOSFET的 |
| 文件页数： | 1/8页 |
| 文件大小： | 113K |
| 代理商： | IRHF58130 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
11.7
7.4
47
25
0.2
±20
173
11.7
2.5
4.9
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (0.063 in./1.6mm from case for 10s)
0.98 (Typical)
g
Pre-Irradiation
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
o
C
A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
IRHF57130
100V, N-CHANNEL
TECHNOLOGY
R
5
3/2/00
www.irf.com
1
Product Summary
Part Number Radiation Level R
DS(on)
IRHF57130
100K Rads (Si) 0.08
IRHF53130
300K Rads (Si) 0.08
IRHF54130
600K Rads (Si) 0.08
IRHF58130
1000K Rads (Si) 0.10
I
D
11.7A
11.7A
11.7A
11.7A
Features:
n
Single Event Effect (SEE) Hardened
n
Ultra Low R
DS(on)
n
Neutron Tolerant
n
Identical Pre- and Post-Electrical Test Conditions
n
Repetitive Avalanche Ratings
n
Dynamic dv/dt Ratings
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
For footnotes refer to the last page
TO-39
PD - 93789A
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PDF描述 |
|---|---|
| IRHF9130 | TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A) |
| IRHG3214 | RADIATION HARDENED POWER MOSFET THRU-HOLE |
| IRHG4214 | RADIATION HARDENED POWER MOSFET THRU-HOLE |
| IRHG7214 | RADIATION HARDENED POWER MOSFET THRU-HOLE |
| IRHG8214 | RADIATION HARDENED POWER MOSFET THRU-HOLE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHF58230 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHF58Z30 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHF58Z30CM | 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) |
| IRHF593034 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHF593110 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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