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参数资料
| 型号： | IRHF9130 |
| 厂商： | International Rectifier |
| 英文描述： | TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A) |
| 中文描述： | 晶体管P沟道（BVdss \u003d- 100V的，的Rds（on）\u003d 0.30ohm，身份证\u003d- 6.5A） |
| 文件页数： | 5/8页 |
| 文件大小： | 128K |
| 代理商： | IRHF9130 |
www.irf.com
5
Pre-Irradiation
IRHF9130
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
500
1000
1500
2000
-V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
10
20
30
40
50
60
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
-6.5
V
=-20V
DS
V
=-50V
DS
V
=-80V
DS
0.1
1
10
100
0.2
1.0
1.8
2.6
3.4
4.2
-V ,Source-to-Drain Voltage (V)
-
S
V = 0 V
T = 25 C
T = 150 C
1
10
100
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25°
J
C
-V , Drain-to-Source Voltage (V)
-
D
I
100us
1ms
10ms
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