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参数资料
| 型号： | IRHG4214 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE |
| 中文描述： | 抗辐射功率MOSFET的通孔 |
| 文件页数： | 4/8页 |
| 文件大小： | 243K |
| 代理商： | IRHG4214 |
Fig 4.
Normalized On-Resistance
Vs. Temperature
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
0.01
0.1
1
10
0.1
1
10
100
T = 25 C
°
20μs PULSE WIDTH
BOTTOM
TOP
VGS
V , Drain-to-Source Voltage (V)
I
D
4.5V
0.1
1
10
0.1
1
10
100
T = 150 C
J
20μs PULSE WIDTH
BOTTOM
TOP
VGS
10V
7.0V
5.0V
V , Drain-to-Source Voltage (V)
I
D
4.5V
0.1
1
10
4
6
8
10
20μs PULSE WIDTH
V = 50V
DS
V , Gate-to-Source Voltage (V)
I
D
T = 25 C
°
T = 150 C
°
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R
(
D
I =
0.5A
V
=
GS
12V
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