- 您现在的位置：买卖IC网 > PDF目录384502 > IRHG7214 (International Rectifier) RADIATION HARDENED POWER MOSFET THRU-HOLE PDF资料下载
参数资料
| 型号： | IRHG7214 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE |
| 中文描述： | 抗辐射功率MOSFET的通孔 |
| 文件页数： | 5/8页 |
| 文件大小： | 243K |
| 代理商： | IRHG7214 |
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
200
400
600
V , Drain-to-Source Voltage (V)
C
C
=
C
+ C
oss
ds
gd
V
C
C
=
=
=
0V,
C
C
gd
f = 1MHz
+ C
gd ,
C SHORTED
GS
iss
rss
gs
C
iss
C
oss
C
rss
0
3
Q , Total Gate Charge (nC)
6
10
13
16
0
4
8
12
16
20
V
G
I =
0.5A
FOR TEST CIRCUIT
SEE FIGURE
13
V
= 50V
DS
V
= 125V
DS
V
= 200V
DS
0.1
1
10
0.4
0.6
0.8
1.0
1.2
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
T = 150 C
°
0.01
0.1
1
10
1
10
100
1000
BY R
DS(on)
OPERATION IN THIS AREA LIMITED
Single Pulse
T
T
= 150°
= 25°
J
C
V , Drain-to-Source Voltage (V)
I
100us
1ms
10ms
相关PDF资料 |
PDF描述 |
|---|---|
| IRHG8214 | RADIATION HARDENED POWER MOSFET THRU-HOLE |
| IRHI7360SE | TRANSISTOR N-CHANNEL(BVdss=400V, Rds(on)=0.20ohm, Id=24.3A) |
| IRHI7460SE | TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=20A) |
| IRHLUB7930Z4 | RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB) |
| IRHLUB7970Z4 | RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHG8110 | 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB) |
| IRHG8214 | 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET THRU-HOLE |
| IRHG9110 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHG9110SCS | 制造商:International Rectifier 功能描述:100V 1.000A HEXFET RADHARD - Rail/Tube |
| IRHG9110SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
发布紧急采购，3分钟左右您将得到回复。