参数资料
型号: IRHLUB7970Z4
厂商: International Rectifier
英文描述: RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB)
中文描述: 抗辐射功率MOSFET的逻辑电平表面贴装(布法罗)
文件页数: 5/8页
文件大小: 180K
代理商: IRHLUB7970Z4
www.irf.com
5
Pre-Irradiation
IRHLUB7970Z4
Maximum Safe Operating Area
Typical Gate Charge Vs.
Gate-to-Source Voltage
Typical Capacitance Vs.
Drain-to-Source Voltage
Typical Source-Drain Diode
Forward Voltage
0
1
2
3
4
5
-VSD , Source-to-Drain Voltage (V)
0.01
0.1
1
10
-S
)
VGS = 0V
TJ = 150°C
TJ = 25°C
1
10
100
1000
-VDS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
-D
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA LIMITED
BY RDS(on)
1
00μ
s
1
10
100
0
50
100
150
200
250
-V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
C
iss
gs
gd
gd
C
oss
C
rss
0
1
2
3
4
5
6
0
2
4
6
8
10
12
Q , Total Gate Charge (nC)
-
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
-0.53A
V
=-12V
DS
V
=-30V
DS
V
=-48V
DS
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