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参数资料
| 型号： | IRHM2C50SE |
| 厂商： | International Rectifier |
| 英文描述： | TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A) |
| 中文描述： | 晶体管N沟道（BVdss \u003d 600V电压的Rds（on）\u003d 0.60ohm，身份证\u003d 10.4A） |
| 文件页数： | 3/4页 |
| 文件大小： | 134K |
| 代理商： | IRHM2C50SE |
Table 2. High Dose Rate
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Min Typ Max
—
—
480
Parameter
Drain-to-Source Voltage
Min Typ Max
Units
—
—
480
Test Conditions
V
DSS
V
Applied drain-to-source voltage during
gamma-dot
Peak radiation induced photo-current
2.3 A/μsec Rate of rise of photo-current
—
μH
Circuit inductance required to limit di/dt
IPP
di/dt
L1
—
—
20
6.4
—
—
—
16
—
—
—
137
6.4
—
—
—
A
Table 3. Single Event Effects
LET (Si)
(MeV/mg/cm
2
)
28
Fluence
(ions/cm
2
)
1 x 10
5
Range
(μm)
~35
V
DS
Bias
(V)
480
V
GS
Bias
(V)
-5
Parameter
Typical
Units
Ion
BV
DSS
600
V
Ni
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier uses
two radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of 12 volts per note 6 and a
V
DSS
bias condition equal to 80% of the device rated
voltage per note 7. Pre- and post-radiation limits of
the devices irradiated to 0.5 X 10
5
Rads(Si) and 1 x
10
5
Rads (Si) are identical and are presented in Table
1, column 1, IRHM2C50SE and IRHM7C50SE, re-
spectively. The values in Table 1 will be met for either
IRHM2C50SE, IRHM7C50SE Devices
Radiation Characteristics
Table 1. Low Dose Rate
Parameter
IRHM2C50SE
50K Rads (Si)
IRHM7C50SE
100K Rads (Si)
Units
Min
600
2.5
—
—
—
—
Test Conditions
Max
—
4.5
100
-100
50
0.60
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
V
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
=0.8 x Max Rating, V
GS
=0V
V
GS
= 12V, I
D
=6.5A
nA
μA
V
SD
—
1.62
V
TC = 25°C, IS = 10.4A,V
GS
= 0V
of the two low dose rate test circuits that are used.
Both pre- and post-radiation performance are tested
and specified using the same drive circuitry and test
conditions in order to provide a direct comparison. It
should be noted that at a radiation level of 1 x 10
5
Rads (Si) no changes in limits are specified in DC
parameters.
High dose rate testing may be done on a special
request basis using a dose rate up to 1 x 10
12
Rads
(Si)/Sec.
International Rectifier radiation hardened HEXFETs
have been characterized in neutron and heavy ion
Single Event Effects (SEE) environments. Single Event
Effects characterization is shown in Table 3.
To Order
Next Data Sheet
Index
Previous Datasheet
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