- 您现在的位置：买卖IC网 > PDF目录384502 > IRHM3Z60 (International Rectifier) RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) PDF资料下载
参数资料
| 型号： | IRHM3Z60 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) |
| 中文描述： | 抗辐射功率MOSFET的通孔（对254AA） |
| 文件页数： | 1/8页 |
| 文件大小： | 131K |
| 代理商： | IRHM3Z60 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
35*
35*
140
250
2.0
±20
500
35
25
0.35
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 ( 0.063 in. (1.6mm) from case for 10s)
9.3 (Typical )
g
Pre-Irradiation
International Rectifier’s RAD-Hard HEXFET
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
technol-
o
C
A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
12/20/01
www.irf.com
1
Product Summary
Part Number Radiation Level R
DS(on)
I
D
IRHM7Z60 100K Rads (Si)
IRHM3Z60 300K Rads (Si)
IRHM4Z60 600K Rads (Si)
IRHM8Z60 1000K Rads (Si) 0.014
35*A
0.014
35*A
0.014
35*A
0.014
35*A
For footnotes refer to the last page
*Current is limited by internal wire diameter
IRHM7Z60
30V, N-CHANNEL
RAD-Hard
HEXFET
TECHNOLOGY
TO-254AA
Features:
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
PD - 91701B
相关PDF资料 |
PDF描述 |
|---|---|
| IRHM4Z60 | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) |
| IRHM53260 | RADIATION HARDENED POWER MOSFET THRU-HOLE |
| IRHM54260 | RADIATION HARDENED POWER MOSFET THRU-HOLE |
| IRHM57260 | RADIATION HARDENED POWER MOSFET THRU-HOLE |
| IRHM57260SE | RADIATION HARDENED POWER MOSFET THRU-HOLE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHM4054 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHM4064 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHM4130 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM4150 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHM4160 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
发布紧急采购，3分钟左右您将得到回复。