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参数资料
| 型号： | IRHM53260 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE |
| 中文描述： | 抗辐射功率MOSFET的通孔 |
| 文件页数： | 5/9页 |
| 文件大小： | 116K |
| 代理商： | IRHM53260 |
www.irf.com
5
Pre-Irradiation
IRHM57260
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
2000
4000
6000
8000
10000
12000
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
rss
C
oss
C
iss
0
40
80
120
160
200
240
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
35A
V
= 40V
DS
V
= 100V
DS
V
= 160V
DS
0.1
1
10
100
1000
0.2
0.6
1.0
1.4
1.8
2.2
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
T = 150 C
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID
10us
100us
1ms
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
OPERATION IN THIS AREA LIMITED
BY RDS(ON)
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PDF描述 |
|---|---|
| IRHM54260 | RADIATION HARDENED POWER MOSFET THRU-HOLE |
| IRHM57260 | RADIATION HARDENED POWER MOSFET THRU-HOLE |
| IRHM57260SE | RADIATION HARDENED POWER MOSFET THRU-HOLE |
| IRHM58260 | RADIATION HARDENED POWER MOSFET THRU-HOLE |
| IRHM7064 | TRANSISTOR N-CHANNEL |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHM53260SE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
| IRHM53264SE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
| IRHM53Z60 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHM53Z60SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM53Z60SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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