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参数资料
| 型号： | IRHM7460SEU |
| 元件分类： | JFETs |
| 英文描述： | 18 A, 500 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 5/8页 |
| 文件大小： | 131K |
| 代理商： | IRHM7460SEU |
IRHM7460SE Device
www.irf.com
5
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
0
2000
4000
6000
8000
V
, Drain-to-Source Voltage (V)
C,
Capacitance
(pF)
DS
V
C
=
0V,
C
f = 1MHz
+ C
C
SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
0
40
80
120
160
200
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
,
Gate-to-Source
Voltage
(V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
18A
V
= 100V
DS
V
= 250V
DS
V
= 400V
DS
1
10
100
1000
10
100
1000
10000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
= 150 C
= 25 C
J
C
o
V
, Drain-to-Source Voltage (V)
I
,
Drain
Current
(A)
I
,
Drain
Current
(A)
DS
D
10us
100us
1ms
10ms
0.1
1
10
100
0.2
0.6
1.0
1.4
1.8
2.2
V
,Source-to-Drain Voltage (V)
I
,
Reverse
Drain
Current
(A)
SD
V
= 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
Pre-Irradiation
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