参数资料
型号: IRHM9130U
英文描述: TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 11A I(D) | TO-254VAR
中文描述: 晶体管| MOSFET的| P通道| 100V的五(巴西)直| 11A条(丁)|对254VAR
文件页数: 4/8页
文件大小: 140K
代理商: IRHM9130U
IRHM9130, IRHM93130 Device
Pre-Irradiation
4
www.irf.com
Fig 4.
Normalized On-Resistance
Vs. Temperature
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
1
10
100
0.1
1
10
100
20μs PULSE WIDTH
T = 25 C
°
TOP
BOTTOM
VGS
-V , Drain-to-Source Voltage (V)
-
D
-5.0V
1
10
100
0.1
1
10
100
20μs PULSE WIDTH
T = 150 C
°
TOP
BOTTOM
VGS
-V , Drain-to-Source Voltage (V)
-
D
-5.0V
1
10
100
5
6
7
8
9
10
11
12
13
VDS
20μs PULSE WIDTH
-V , Gate-to-Source Voltage (V)
-
D
T = 25 C
°
T = 150 C
°
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R
(
D
V
=
I =
GS
-12V
-11A
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