- 您现在的位置：买卖IC网 > PDF目录384503 > IRHN7450 (International Rectifier) HEXFET TRANSISTOR PDF资料下载
参数资料
| 型号： | IRHN7450 |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET TRANSISTOR |
| 中文描述： | 的HEXFET晶体管 |
| 文件页数： | 1/12页 |
| 文件大小： | 310K |
| 代理商： | IRHN7450 |
Product Summary
Part Number
IRHN7450
IRHN8450
BV
DSS
500V
500V
R
DS(on)
0.45
0.45
I
D
11A
11A
Features:
n
Radiation Hardened up to 1 x 10
6
Rads (Si)
n
Single Event Burnout (SEB) Hardened
n
Single Event Gate Rupture (SEGR) Hardened
n
Gamma Dot (Flash X-Ray) Hardened
n
Neutron Tolerant
n
Identical Pre- and Post-Electrical Test Conditions
n
Repetitive Avalanche Rating
n
Dynamic dv/dt Rating
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Electrically Isolated
n
Ceramic Eyelets
n
Surface Mount
n
Light Weight
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
IRHN7450, IRHN8450
11
7.0
44
150
1.2
±20
500
11
15
3.5
-55 to 150
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
300 (0.063 in. (1.6mm) from case for 10s)
2.6 (typical)
g
PD - 90819A
Pre-Irradiation
500Volt, 0.45
, MEGA RAD HARD HEXFET
International Rectifier’s RAD HARD technology
HEXFETs demonstrate excellent threshold voltage
stability and breakdown voltage stability at total
radiaition doses as high as 1x10
6
Rads(Si). Under
identical
pre- and post-irradiation test conditions, In-
ternational Rectifier’s RAD HARD HEXFETs retain
identical
electrical specifications up to 1 x 10
5
Rads
(Si) total dose. No compensation in gate drive circuitry
is required. These devices are also capable of surviv-
ing transient ionization pulses as high as 1 x 10
12
Rads
(Si)/Sec, and return to normal operation within a few
microseconds. Since the RAD HARD process utilizes
International Rectifier’s patented HEXFET technology,
the user can expect the highest quality and reliability
in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy
pulse circuits in space and weapons environments.
o
C
A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
TRANSISTOR
JANSR2N7270U
JANSH2N7270U
www.irf.com
1
02/01/99
N CHANNEL
MEGA RAD HARD
IRHN7450
IRHN8450
相关PDF资料 |
PDF描述 |
|---|---|
| IRHN8450 | HEXFET Transistor(HEXFET 晶体管) |
| IRHN8150 | TRANSISTOR N-CHANNEL |
| IRHNA7160 | TRANSISTOR N-CHANNEL |
| IRHNA8160 | TRANSISTOR N-CHANNEL |
| IRHNA7260 | TRANSISTOR N-CHANNEL |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHN7450SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHN7450SE | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHN7450SESCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHN7450SESCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHN7C50SE | 制造商:IRF 制造商全称:International Rectifier 功能描述:TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A) |
发布紧急采购，3分钟左右您将得到回复。