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参数资料
| 型号： | IRHNA3260 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 43A I(D) | SMT |
| 中文描述： | 晶体管| MOSFET的| N沟道| 200伏五（巴西）直|第43A条（丁）|贴片 |
| 文件页数： | 1/8页 |
| 文件大小： | 119K |
| 代理商： | IRHNA3260 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
75*
56
300
300
2.4
±20
500
75*
30
2.5
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 ( for 5 sec.)
3.5 (Typical )
g
Pre-Irradiation
International Rectifier’s RADHard HEXFET
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
technol-
o
C
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT(SMD-3)
12/12/01
www.irf.com
1
Product Summary
Part Number Radiation Level R
DS(on)
I
D
IRHNA7064 100K Rads (Si) 0.015
75*A
IRHNA3064 300K Rads (Si) 0.015
75*A
IRHNA4064 600K Rads (Si) 0.015
75*A
IRHNA8064 1000K Rads (Si) 0.015
75*A
For footnotes refer to the last page
*Current is limited by pin diameter
IRHNB7064
60V, N-CHANNEL
HEXFET
RAD Hard
TECHNOLOGY
SMD-3
Features:
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
PD - 91737A
相关PDF资料 |
PDF描述 |
|---|---|
| IRHNB3260 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 43A I(D) | SMT |
| IRHNB3Z60 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT |
| IRHNB4260 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 43A I(D) | SMT |
| IRHNB4Z60 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT |
| IRHNB7064 | 60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHNA3Z60 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNA3Z60SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNA3Z60SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNA4064 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNA4160 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
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