参数资料
型号: IRHNA57060
厂商: International Rectifier
英文描述: 200V, N-CHANNEL
中文描述: 为200V,N沟道
文件页数: 6/8页
文件大小: 107K
代理商: IRHNA57060
IRHNA57260
Pre-Irradiation
6
www.irf.com
Fig 10a.
Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
V
DS
Pulse Width
≤ 1
μs
Duty Factor
≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
12V
+
-
V
DD
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current Vs.
Case Temperature
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T =P
x Z
+ T
2
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
t
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
T , Case Temperature (°
75
100
125
150
0
10
20
30
40
50
60
I
D
相关PDF资料
PDF描述
IRHNA54260 200V, N-CHANNEL
IRHNA57260 200V, N-CHANNEL
IRHNA58260 200V, N-CHANNEL
IRHNA54Z60 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表贴型抗辐射功率N沟道MOSFET)
IRHNA53Z60 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表贴型抗辐射功率N沟道MOSFET)
相关代理商/技术参数
参数描述
IRHNA57064 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
IRHNA57064/SLDC/BAE 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 75A 3SMD-2 SLDC FOR BAE - Virtual or Non-Physical Inventory (Software & Literature)
IRHNA57160 制造商:International Rectifier 功能描述:100V 51.000A HEXFET RADHARD - Bulk
IRHNA57163SE 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk
IRHNA57163SED 制造商:International Rectifier 功能描述:130V 750.000A HEXFET RADHARD - Bulk