参数资料
型号: IRHNA597160
英文描述: TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 52A I(D) | SMT
中文描述: 晶体管| MOSFET的| P通道| 100V的五(巴西)直| 52A条(丁)|贴片
文件页数: 8/8页
文件大小: 119K
代理商: IRHNA597160
8
www.irf.com
IRHNB7064
Pre-Irradiation
Pulse width
300
μ
s; Duty Cycle
2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
48 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25V, starting TJ = 25
°
C, L=0.17mH
Peak IL = 75A, VGS =12V
ISD
75A, di/dt
220A/
μ
s,
VDD
60V, TJ
150
°
C
Foot Notes:
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 12/01
Case Outline and Dimensions
SMD-3
PAD ASSIGNMENTS
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