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参数资料
| 型号： | IRHNB7064 |
| 英文描述： | 60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package |
| 中文描述： | 60V的100kRad高可靠性单个N -沟道工贸硬化的贴片MOSFET的- 3封装 |
| 文件页数： | 7/8页 |
| 文件大小： | 116K |
| 代理商： | IRHNB7064 |
www.irf.com
7
Pre-Irradiation
IRHNB7260
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
GS
25
50
75
100
125
150
0
200
400
600
800
1000
1200
E
ID
19A
27A
43A
TOP
BOTTOM
Starting T , Junction Temperature( C)
相关PDF资料 |
PDF描述 |
|---|---|
| IRHNB7260 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 43A I(D) |
| IRHNB7264SE | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 34A I(D) | SMT |
| IRHNB7360SE | 400V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-3 package |
| IRHNB7Z60 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT |
| IRHNB8064 | 60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHNB7160 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNB7260 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNB7264SE | 制造商:International Rectifier 功能描述: |
| IRHNB7360SE | 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3) |
| IRHNB7460SE | 制造商:International Rectifier 功能描述: |
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