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参数资料
| 型号： | IRHNB8Z60 |
| 英文描述： | 30V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package |
| 中文描述： | 30V的1000kRad高可靠性单个N -沟道工贸硬化的贴片MOSFET的- 3封装 |
| 文件页数： | 1/8页 |
| 文件大小： | 116K |
| 代理商： | IRHNB8Z60 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
43
27
172
300
2.4
±20
500
43
30
5.7
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (for 5 Sec.)
3.5 (Typical )
g
Pre-Irradiation
International Rectifier’s RADHard HEXFET
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
technol-
o
C
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT(SMD-3)
12/7/01
www.irf.com
1
Product Summary
Part Number Radiation Level R
DS(on)
IRHNB7260 100K Rads (Si) 0.070
IRHNB3260 300K Rads (Si) 0.070
IRHNB4260 600K Rads (Si) 0.070
IRHNB8260 1000K Rads (Si) 0.070
I
D
43A
43A
43A
43A
For footnotes refer to the last page
IRHNB7260
200V, N-CHANNEL
HEXFET
RAD Hard
TECHNOLOGY
SMD-3
Features:
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
PD - 91798A
相关PDF资料 |
PDF描述 |
|---|---|
| IRHNJ3230 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.4A I(D) | SMT |
| IRHNJ4230 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.4A I(D) | SMT |
| IRHNJ57133SE | TRANSISTOR | MOSFET | N-CHANNEL | 130V V(BR)DSS | 20A I(D) | SMT |
| IRHNJ57230SE | 30V N-Channel PowerTrench MOSFET |
| IRHNJ593230 | TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 8A I(D) | SMT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHNJ3130 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNJ3130SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNJ3130SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNJ3230 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNJ3230SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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