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参数资料
| 型号： | IRHNJ4130 |
| 厂商： | International Rectifier |
| 英文描述： | 100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY |
| 中文描述： | 100V的N通道抗辐射HEXFET MOSFET技术 |
| 文件页数： | 1/8页 |
| 文件大小： | 109K |
| 代理商： | IRHNJ4130 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy 150
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
14.4
9.1
58
75
0.6
±20
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
14.4
7.5
6.0
-55 to 150
300 (for 5s)
1.0 (Typical)
g
Pre-Irradiation
International Rectifier’s RAD-Hard
TM
HEXFET
MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low R
DS(on)
and low gate charge reduces
the power losses in switching applications such as DC
to DC converters and motor control. These devices re-
tain all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of parallel-
ing and temperature stability of electrical parameters.
o
C
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
2/4/00
www.irf.com
1
Features:
n
Single Event Effect (SEE) Hardened
n
Low R
DS(on)
n
Low Total Gate Charge
n
Proton Tolerant
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Ceramic Package
n
Surface Mount
n
Light Weight
For footnotes refer to the last page
SMD-0.5
IRHNJ7130
100V, N-CHANNEL
RAD-Hard
MOSFET TECHNOLOGY
HEXFET
Product Summary
Part Number Radiation Level R
DS(on)
IRHNJ7130 100K Rads (Si) 0.18
IRHNJ3130 300K Rads (Si) 0.18
IRHNJ4130 600K Rads (Si) 0.18
IRHNJ8130 1000K Rads (Si) 0.18
I
D
14.4A
14.4A
14.4A
14.4A
PD - 93820
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PDF描述 |
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| IRHNJ8130 | 100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY |
| IRHNJ7130 | 100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHNJ4130SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNJ4130SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNJ4230 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNJ4230SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNJ4230SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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