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参数资料
| 型号： | IRHNJ53034 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| 中文描述： | 抗辐射功率MOSFET表面贴装系统（SMD - 0.5） |
| 文件页数： | 2/8页 |
| 文件大小： | 189K |
| 代理商： | IRHNJ53034 |
IRHNJ57034, JANSR2N7480U3
Pre-Irradiation
2
www.irf.com
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
60
—
Typ
—
0.057
Max Units
—
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
V
V/°C
—
—
0.03
VGS = 12V, ID = 21A
2.0
16
—
—
—
—
—
—
4.0
—
10
25
V
VDS = VGS, ID = 1.0mA
VDS > =15V, IDS = 21A
VDS=48V ,VGS=0V
VDS = 48V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 22A
VDS = 30V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
45
10
15
25
100
35
30
—
nC
VDD = 30V, ID = 22A,
VGS =12V, RG = 7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1152
535
42
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
nA
nH
ns
μ
A
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
—
—
—
6.9
1.67
—
soldered to a 2” square copper-clad board
°C/W
Measured from the center of
drain pad to center of source pad
Note: Corresponding Spice and Saber models are available on International Rectifier Web site
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
ISM
VSD
trr
QRR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
22*
88
1.2
125
322
V
ns
nC
T
j
= 25°C, IS = 22A, VGS = 0V
Tj = 25°C, IF = 22A, di/dt
≤
100A/
μ
s
VDD
≤
25V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
* Current is limited by package
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