- 您现在的位置：买卖IC网 > PDF目录377522 > IRHNJ57130 (International Rectifier) Surface Mount Radiation Hardened Power MOSFET(表贴型抗辐射功率MOS场效应管) PDF资料下载
参数资料
| 型号： | IRHNJ57130 |
| 厂商： | International Rectifier |
| 英文描述： | Surface Mount Radiation Hardened Power MOSFET(表贴型抗辐射功率MOS场效应管) |
| 中文描述： | 表面安装抗辐射功率MOSFET（表贴型抗辐射功率马鞍山场效应管） |
| 文件页数： | 1/8页 |
| 文件大小： | 102K |
| 代理商： | IRHNJ57130 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
22*
16
88
75
0.6
±20
70
22
7.5
1.4
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 ( for 5s )
1.0 ( Typical )
g
Pre-Irradiation
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
o
C
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRHNJ57130
100V, N-CHANNEL
TECHNOLOGY
R
5
4/10/00
www.irf.com
1
* Current is limited by internal wire diameter
For footnotes refer to the last page
Product Summary
Part Number Radiation Level R
DS(on)
IRHNJ57130 100K Rads (Si) 0.060
IRHNJ53130 300K Rads (Si) 0.060
IRHNJ54130 600K Rads (Si) 0.060
IRHNJ58130 1000K Rads (Si) 0.075
I
D
22A*
22A*
22A*
22A*
Features:
n
Single Event Effect (SEE) Hardened
n
Ultra Low R
DS(on)
n
Low Total Gate Charge
n
Proton Tolerant
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Surface Mount
n
Ceramic Package
n
Light Weight
SMD-0.5
PD - 93754B
相关PDF资料 |
PDF描述 |
|---|---|
| IRHNJ57230 | 200V, N-Channel Surface Mount Radiation Hardened Power MOSFET(200V,表贴型抗辐射功率N沟道MOS场效应管) |
| IRHNJ63130 | 100V, N-CHANNEL |
| IRHNJ67130 | 100V, N-CHANNEL |
| IRHQ53110 | 30V N-Channel PowerTrench MOSFET |
| IRHQ57110 | 30V N-Channel PowerTrench MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHNJ57133SE | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 130V 20A 3SMD-0.5 - Rail/Tube |
| IRHNJ57230 | 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| IRHNJ57230SE | 制造商:International Rectifier 功能描述:N CH MOSFET 200V .22OHM 12A MAX - Rail/Tube |
| IRHNJ57234SE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
| IRHNJ57Z30 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 22A 3SMD-0.5 - Bulk |
发布紧急采购，3分钟左右您将得到回复。