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参数资料
| 型号： | IRHNJ58034 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| 中文描述： | 抗辐射功率MOSFET表面贴装系统（SMD - 0.5） |
| 文件页数： | 8/8页 |
| 文件大小： | 189K |
| 代理商： | IRHNJ58034 |
IRHNJ57034, JANSR2N7480U3
Pre-Irradiation
8
www.irf.com
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
48 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 50V, starting TJ = 25°C, L= 0.4mH
Peak IL = 22A, VGS = 12V
ISD
≤
22A, di/dt
≤
234A/
μ
s,
VDD
≤
60V, TJ
≤
150°C
Footnotes:
Case Outline and Dimensions — SMD-0.5
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER :
205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 06/2004
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